COOLMOS technology from Infineon represents a significant advancement in MOSFET performance, offering improved efficiency and reliability. One of its key advantages is the substantial reduction in on-resistance. For example, 600V and 800V lateral electric field MOSFETs with the same die area as conventional devices exhibit on-resistance that is as low as 1/5 and 1/10, respectively. This results in lower conduction losses, reduced heat generation, and a cooler operating temperature, which is why this technology is referred to as COOLMOS.
In addition to lower on-resistance, COOLMOS also offers a smaller package size and reduced thermal resistance. The die size for COOLMOS devices of the same current rating is significantly smaller—about 1/3 and 1/4 of conventional MOSFETs—leading to a more compact design. This reduction in die thickness also improves thermal performance, lowering the RTHJC (thermal resistance between junction and case) from 1°C/W to 0.6°C/W in TO-220 packages. As a result, the rated power increases from 125W to 208W, enhancing the device’s ability to dissipate heat effectively.
Another major improvement is in switching characteristics. COOLMOS features lower gate charge (QG) and reduced switching losses compared to traditional MOSFETs. Specifically, the switching time is approximately half that of conventional devices, and switching loss is reduced by about 50%. This is largely due to the low internal gate resistance (<1Ω), which allows faster turn-off times and better overall performance in high-frequency applications.
COOLMOS also demonstrates strong avalanche breakdown resistance and an enhanced short-circuit safe operating area (SCSOA). Unlike standard MOSFETs, COOLMOS can safely handle short-circuit conditions without damage. This is achieved through optimized transfer characteristics and reduced thermal resistance. When VGS exceeds 8V, the drain current stabilizes, entering a constant-current mode. Even at higher junction temperatures, the current remains within safe limits, typically around twice the ID25°C value. During a short circuit, the gate drive voltage of 15V prevents the drain current from rising excessively, limiting the power dissipation to 350V × 2ID25°C, which helps reduce overheating.
Thanks to its efficient thermal management, COOLMOS can withstand a 10µs short-circuit pulse at 0.6VDSS with a time interval greater than 1 second and up to 1000 cycles without damage. This makes it comparable to IGBTs in terms of protection during fault conditions, making it ideal for applications where reliability and safety are critical.
Overall, COOLMOS is a game-changer in power electronics, offering superior performance, efficiency, and reliability in a compact form factor. Whether you're designing high-speed power supplies, motor drives, or industrial systems, COOLMOS provides the benefits needed to meet modern performance demands.
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