COOLMOS technology represents a significant advancement in power MOSFET design, offering improved performance and reliability. One of its key benefits is the reduction in on-resistance. For example, INFINEON’s lateral electric field MOSFETs with 600V and 800V ratings have the same die area as conventional MOSFETs but exhibit an on-resistance that is as low as 1/5 and 1/10, respectively. This results in a dramatic drop in turn-on voltage, from 12.6V and 19.1V to 6.07V and 7.5V, under rated junction temperature and current. The conduction loss is also significantly reduced, reaching about half and one-third of that of traditional devices, which leads to lower heat generation and cooler operation—hence the name COOLMOS.
In addition to lower on-resistance, COOLMOS features a smaller package size and reduced thermal resistance. The die size for the same current rating is reduced by up to 1/3 or 1/4 compared to conventional MOSFETs, allowing for more compact designs. For instance, the TO-220 package RTHJC (thermal resistance between junction and case) is reduced from 1°C/W to 0.6°C/W, while the rated power increases from 125W to 208W. This improvement enhances the device's ability to dissipate heat effectively.
Another major advantage of COOLMOS lies in its improved switching characteristics. The gate charge and switching parameters are superior to those of conventional MOSFETs. Due to the reduction in QG, especially QGD, the switching time is approximately half that of traditional devices, and switching losses are cut by around 50%. Additionally, the low internal gate resistance (<1Ω) contributes to faster turn-off times, making COOLMOS ideal for high-speed applications.
COOLMOS also demonstrates strong avalanche breakdown resistance and a wider Safe Operating Area (SCSOA), which is not typically available in standard MOSFETs. While the avalanche current (IAS) at the same rated current is similar to that of conventional MOSFETs, the reduced die area means IAS is slightly smaller. However, with the same die area, both IAS and EAS (energy avalanche) are greater than those of traditional devices.
One of the most notable features of COOLMOS is its short-circuit safe operating area (SCSOA). This capability is achieved through optimized transfer characteristics and reduced thermal resistance. As shown in the graph, when VGS exceeds 8V, the drain current of COOLMOS stabilizes, entering a constant-current mode. Even as the junction temperature rises, the constant current value decreases, but it remains around twice the ID at 25°C, or 3–3.5 times the normal operating current. During a short-circuit condition, the drain current does not exceed ten times the ID25°C due to the 15V gate drive, limiting the power dissipated to 350V × 2ID25°C. This ensures minimal heating of the die during short circuits.
The reduced thermal resistance allows the heat generated by the die to be quickly dissipated to the package, slowing down the temperature rise. As a result, COOLMOS can withstand a 10µs short-circuit pulse at 0.6VDSS, with a time interval greater than 1 second and up to 1000 cycles without damage. This makes COOLMOS highly reliable and capable of protecting itself similarly to an IGBT in the event of a short circuit.
Overall, COOLMOS offers a combination of lower on-resistance, better thermal management, faster switching, and enhanced safety features, making it a preferred choice for modern power electronics applications.
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